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| SMD Type HEXFET Power MOSFET KRF7343 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Continuous Drain Current ,VGS@10V , Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy *3 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *5 @Ta= 25 @Ta= 70 *5 *5 VGS EAS IAR EAR dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM PD N-Channel 55 4.7 3.8 38 2.0 1.3 20 72 4.7 0.20 5.0 P-Channel -55 -3.4 -2.7 -27 Unit V A W V 114 -3.4 mJ A mJ -5.0 V/ns -55 to + 150 62.5 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 4.7A, di/dt -3.4A, di/dt 220A/ -150A/ s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 N-Channel Starting TJ = 25 , L = 6.5mH RG = 25 , IAS = 4.7A. P-Channel Starting TJ = 25 , L = 20mH RG = 25 , IAS = -3.4A. *5 Surface mounted on FR-4 board, t *4 Pulse width 300 s; duty cycle 10sec. 2%. www.kexin.com.cn 1 SMD Type KRF7343 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 4.7A*1 VGS = 4.5V, ID = 3.8A*1 VGS = -10V, ID = -3.4A*1 VGS = -4.5V, ID = -2.7A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS = 10V, ID = 4.5A*1 VDS = -10V, ID = -3.5A*1 VDS = 55V, VGS = 0V VDS = -55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 55 VDS = -55V, VGS = 0V, TJ = 55 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel ID = -3.1A,VDS = -44V,VGS = -10V N-Channel VDD = 28V,ID = 1.0A,RG = 6.0 RD=16 P-Channel VDD = -28V,ID = -1.0A,RG = 6.0 RD=16 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel VGS = 0V,VDS = 25V,f = 1.0MHz P-Channel VGS = 0V,VDS = -25V,f = 1.0MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min 55 -55 Typ Max Unit V 0.059 0.054 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 TJ V/ Static Drain-to-Source On-Resistance RDS(on) Gate Threshold Voltage Forward Transconductance VGS(th) gfs V S 2.0 -2.0 25 -25 100 100 24 26 2.3 3.0 7.0 8.4 8.3 14 3.2 10 32 43 13 22 740 690 190 210 71 86 pF 36 38 3.4 4.5 10 13 12 22 4.8 15 48 64 20 32 ns nC nA A Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS = 20V N-Channel ID =4.5A,VDS = 44V,VGS =10V 2 www.kexin.com.cn SMD Type KRF7343 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Symbol IS ISM VSD trr Qrr TJ = 25 , IS = 2.0A, VGS = 0V*1 TJ = 25 , IS = -2.0A, VGS = 0V*1 N-Channel TJ = 25 , IF =2.0A,di/dt = 100A/ P-Channel TJ=25 ,IF=-2.0A,di/dt=-100A/ s*1 s*1 Testconditons N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.70 0.80 60 54 120 85 Min Typ Max 2.0 -2.0 38 -27 1.2 -1.2 90 80 170 130 IC IC Unit A Body Diode) *2 V ns nC *2 Repetitive rating; pulse width limited by max. junction temperature. www.kexin.com.cn 3 |
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